PART |
Description |
Maker |
RF1S640SM IRF640 RF1S640 |
N-Channel Power MOSFETs/ 18A/ 150-200V 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
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IRF640 RF1S640SM FN1585 |
18A, 200V, 0.180 Ohm,, N-Channel PowerMOSFET(18A, 200V, 0.180 Ohm,N娌??澧?己?????OS?烘?搴??) From old datasheet system 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
|
INTERSIL CORP
|
RFP18N10 RFM18N08 RFM18N10 RFP18N08 |
18A/ 80V and 100V/ 0.100 Ohm/ N-Channel Power MOSFETs 18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
APT6035BVR |
POWER MOS V 600V 18A 0.350 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
FDMC4435BZ |
P-Channel Power Trench? MOSFET -30V, -18A, 20.0mΩ P-Channel Power Trench㈢ MOSFET -30V, -18A, 20.0mヘ
|
Fairchild Semiconductor
|
FDP18N20F FDPF18N20FT |
N-Channel UniFETTM FRFETMOSFET 200V, 18A, 140m N-Channel MOSFET 200V, 18A, 0.14楼? N-Channel MOSFET 200V, 18A, 0.14Ω
|
Fairchild Semiconductor
|
FDS8672S FAIRCHILDSEMICONDUCTORCORP-FDS8672S |
N-Channel PowerTrench㈢ SyncFET⑩ 30V, 18A, 4.8mヘ N-Channel PowerTrench? SyncFET?/a> 30V, 18A, 4.8mΩ
|
Fairchild Semiconductor
|
IXFH4N100 IXFT4N100 IXFH4N100Q IXFT4N100Q |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电.0Ω的N沟道增强型HiPerFET功率MOSFET) 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4A I(D) | TO-247AD HiPerFET Power MOSFETs Q-Class Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
|
STF20NF20 STP20NF20 STD20NF20 |
N-channel 200V - 0.10-18A- DPAK/TO-220/TO-220FP Low gate charge STripFETPower MOSFET N沟道200 0.10 18A条,DPAK/TO-220/TO-220FP低栅极电荷STripFET⑩功率MOSFET N-channel 200V - 0.10ヘ -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET⑩ Power MOSFET N-channel 200V - 0.10Ω -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET Power MOSFET N-channel 200V - 0.10Ω -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET?/a> Power MOSFET
|
STMicroelectronics N.V.
|
FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射,抗SEGR N沟道功率MOSFET(抗辐射沟道马鞍山场效应管) Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
IRF520 MTP10N10 MTP10N08 IRF522 IRF522R IRF123 IRF |
IRF120-123/IRF520-523 MTP10N08/10N10 N-Channel Power MOSFETs N-Channel Power MOSFETs, 11 A, 60-100 V Trans MOSFET N-CH 100V 7A 3-Pin(3 Tab) TO-220AB
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conductor P... New Jersey Semiconductors New Jersey Semi-Conduct...
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FSJ163R4 FSJ163D FSJ163D1 FSJ163D3 FSJ163R FSJ163R |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs 70A/ 100V/ 0.022 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
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INTERSIL[Intersil Corporation]
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